Effect of bath temperature and annealing on the formation of CuInSe2
Identifieur interne : 005662 ( Main/Repository ); précédent : 005661; suivant : 005663Effect of bath temperature and annealing on the formation of CuInSe2
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Abstract
CuInSe2 films of 2pm thickness were electrodeposited potentiostatically, from aqueous solution containing thiocyanate as a complexing agent, on Mo substrates. For all the experiments, the potential of the potentiostatic deposition of the materials was chosen to be -1 V, whereas the bath temperature of electrolyte was varied from 20 to 80°C. It was found that the electrodeposited CuInSe2 was characterized by an amorphous layer and densely-packed nanometric grains with a good homogeneity. After vacuum annealing at 200 °C, glancing angle X-ray diffraction revealed the presence of the CuInSe2 phase whereas annealing under selenium atmosphere lead to the growth of molybdenum selenide compound MoSe2, in addition to a better crystallization of the copper indium diselenide compound. Scanning electron microscopic revealed that despite an increase in the grains dimensions, there was no significant change in the films surface morphology when the bath temperature was varied from 20 to 80 °C. At the same time, the composition of the electrodeposited Cu-In-Se layers becomes richer in copper. This increase in copper concentration is mainly compensated by a deficit in selenium atoms.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effect of bath temperature and annealing on the formation of CuInSe<sub>2</sub></title><author><name sortKey="Benaicha, M" uniqKey="Benaicha M">M. Benaicha</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Laboratoire d'Energétique et Electrochimie du Solide, Département de Génie des procédés, Faculté des Sciences de l'ingénieur, Université Ferhat Abbas</s1><s2>19000-Setif</s2><s3>DZA</s3><sZ>1 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>19000-Setif</wicri:noRegion></affiliation></author><author><name sortKey="Benouattas, N" uniqKey="Benouattas N">N. Benouattas</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Laboratoire d'Etude des Surfaces et Interfaces des Matériaux Solides (LESIMS), Département de Physique, Faculté des Sciences, Université Ferhat Abbas</s1><s2>Sétif</s2><s3>DZA</s3><sZ>2 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>Sétif</wicri:noRegion></affiliation></author><author><name sortKey="Benazzouz, C" uniqKey="Benazzouz C">C. Benazzouz</name><affiliation wicri:level="1"><inist:fA14 i1="03"><s1>CRNA, 2 Bd Frantz Fanon</s1><s2>16000-Alger</s2><s3>DZA</s3><sZ>3 aut.</sZ></inist:fA14><country>Algérie</country><wicri:noRegion>16000-Alger</wicri:noRegion></affiliation></author><author><name sortKey="Ouahab, L" uniqKey="Ouahab L">L. Ouahab</name><affiliation wicri:level="4"><inist:fA14 i1="04"><s1>Laboratoire de Chimie du Solide et Inorganique Moléculaire de Rennes (LCSIM), Université de Rennes 1</s1><s3>FRA</s3><sZ>4 aut.</sZ></inist:fA14><country>France</country><wicri:noRegion>Université de Rennes 1</wicri:noRegion><placeName><settlement type="city">Rennes</settlement><region type="region" nuts="2">Région Bretagne</region></placeName><orgName type="university">Université de Rennes 1</orgName><orgName type="institution" wicri:auto="newGroup">Université européenne de Bretagne</orgName></affiliation></author></titleStmt><publicationStmt><idno type="inist">09-0226092</idno><date when="2009">2009</date><idno type="stanalyst">PASCAL 09-0226092 INIST</idno><idno type="RBID">Pascal:09-0226092</idno><idno type="wicri:Area/Main/Corpus">005718</idno><idno type="wicri:Area/Main/Repository">005662</idno></publicationStmt><seriesStmt><idno type="ISSN">0927-0248</idno><title level="j" type="abbreviated">Sol. energy mater. sol. cells</title><title level="j" type="main">Solar energy materials and solar cells</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Copper Indium Selenides</term><term>Crystallization</term><term>Electrodeposition</term><term>Molybdenum</term><term>Molybdenum selenides</term><term>Selenium</term><term>Solar cell</term><term>Temperature effect</term><term>Thin film cell</term><term>Thiocyanates</term><term>Vacuum annealing</term><term>X ray diffractometry</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Effet température</term><term>Recuit sous vide</term><term>Cellule solaire</term><term>Cellule couche mince</term><term>Thiocyanate</term><term>Molybdène</term><term>Cuivre Indium Séléniure</term><term>Diffractométrie RX</term><term>Sélénium</term><term>Séléniure de molybdène</term><term>Cristallisation</term><term>Dépôt électrolytique</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Molybdène</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">CuInSe<sub>2</sub> films of 2pm thickness were electrodeposited potentiostatically, from aqueous solution containing thiocyanate as a complexing agent, on Mo substrates. For all the experiments, the potential of the potentiostatic deposition of the materials was chosen to be -1 V, whereas the bath temperature of electrolyte was varied from 20 to 80°C. It was found that the electrodeposited CuInSe<sub>2</sub> was characterized by an amorphous layer and densely-packed nanometric grains with a good homogeneity. After vacuum annealing at 200 °C, glancing angle X-ray diffraction revealed the presence of the CuInSe<sub>2</sub> phase whereas annealing under selenium atmosphere lead to the growth of molybdenum selenide compound MoSe<sub>2</sub>, in addition to a better crystallization of the copper indium diselenide compound. Scanning electron microscopic revealed that despite an increase in the grains dimensions, there was no significant change in the films surface morphology when the bath temperature was varied from 20 to 80 °C. At the same time, the composition of the electrodeposited Cu-In-Se layers becomes richer in copper. This increase in copper concentration is mainly compensated by a deficit in selenium atoms.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0927-0248</s0></fA01><fA03 i2="1"><s0>Sol. energy mater. sol. cells</s0></fA03><fA05><s2>93</s2></fA05><fA06><s2>2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Effect of bath temperature and annealing on the formation of CuInSe<sub>2</sub></s1></fA08><fA11 i1="01" i2="1"><s1>BENAICHA (M.)</s1></fA11><fA11 i1="02" i2="1"><s1>BENOUATTAS (N.)</s1></fA11><fA11 i1="03" i2="1"><s1>BENAZZOUZ (C.)</s1></fA11><fA11 i1="04" i2="1"><s1>OUAHAB (L.)</s1></fA11><fA14 i1="01"><s1>Laboratoire d'Energétique et Electrochimie du Solide, Département de Génie des procédés, Faculté des Sciences de l'ingénieur, Université Ferhat Abbas</s1><s2>19000-Setif</s2><s3>DZA</s3><sZ>1 aut.</sZ></fA14><fA14 i1="02"><s1>Laboratoire d'Etude des Surfaces et Interfaces des Matériaux Solides (LESIMS), Département de Physique, Faculté des Sciences, Université Ferhat Abbas</s1><s2>Sétif</s2><s3>DZA</s3><sZ>2 aut.</sZ></fA14><fA14 i1="03"><s1>CRNA, 2 Bd Frantz Fanon</s1><s2>16000-Alger</s2><s3>DZA</s3><sZ>3 aut.</sZ></fA14><fA14 i1="04"><s1>Laboratoire de Chimie du Solide et Inorganique Moléculaire de Rennes (LCSIM), Université de Rennes 1</s1><s3>FRA</s3><sZ>4 aut.</sZ></fA14><fA20><s1>262-266</s1></fA20><fA21><s1>2009</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>18016</s2><s5>354000186504660170</s5></fA43><fA44><s0>0000</s0><s1>© 2009 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>24 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>09-0226092</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Solar energy materials and solar cells</s0></fA64><fA66 i1="01"><s0>NLD</s0></fA66><fC01 i1="01" l="ENG"><s0>CuInSe<sub>2</sub> films of 2pm thickness were electrodeposited potentiostatically, from aqueous solution containing thiocyanate as a complexing agent, on Mo substrates. For all the experiments, the potential of the potentiostatic deposition of the materials was chosen to be -1 V, whereas the bath temperature of electrolyte was varied from 20 to 80°C. It was found that the electrodeposited CuInSe<sub>2</sub> was characterized by an amorphous layer and densely-packed nanometric grains with a good homogeneity. After vacuum annealing at 200 °C, glancing angle X-ray diffraction revealed the presence of the CuInSe<sub>2</sub> phase whereas annealing under selenium atmosphere lead to the growth of molybdenum selenide compound MoSe<sub>2</sub>, in addition to a better crystallization of the copper indium diselenide compound. Scanning electron microscopic revealed that despite an increase in the grains dimensions, there was no significant change in the films surface morphology when the bath temperature was varied from 20 to 80 °C. At the same time, the composition of the electrodeposited Cu-In-Se layers becomes richer in copper. 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